AlGaInP
基本解释
- 铝镓铟磷
英汉例句
- Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J].
引用该论文 陈贵楚;范广涵;陈练辉;刘鲁. - For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
对红色发光二极体(LED)而言，由于晶格常数之要求，通常将发光材料磷化铝铟镓成长于砷化镓基板上。 - Application of wafer bonding in AlGaInP high brightness LED devices
晶片键合在AlGaInP发光二极管中的应用 - A novel AlGaInP thin-film light emitting diode with Omni directional reflector
新型全方位反射铝镓铟磷薄膜发光二极管 - Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
红色AlGaInP激光器的特性及热特性分析