ohmic-contact

基本解释

By chemical deposition process,nickel electrode on PTCR ceramics of ohmic contact can be acquired at low cost.
用化学沉积法在PTCR陶瓷上制作镍电极可形成良好的欧姆接触，且成本较低。
Another object is to dope large area amorphous semiconductor materials to form an ohmic contact with a conducting substrate.
另一个目的是掺杂大面积的非晶半导体材料，与导电基片之间形成欧姆接触。
Au-Ge alloy has low contact resistance,and good stickiness with substrate.It is used mainly in metal/semiconductor(M/S) system to form ohmic contact.
金锗合金有着低的接触电阻及与衬底粘附性好等特点,主要用于M/S(金属/半导体)中以形成欧姆接触;
We find this IMO contact film exhibits ohmic contact with low contact resistance after annealing under nitrogen ambient.
我们发现此种材料在氮气底下退火后，可以形成欧姆接触，并且有很低的特徵接触阻抗。
The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper.
报道了n型GaAs上欧姆接触的制备及其可靠性，以及基于欧姆接触退化的GaAsMES－FET的失效分析。